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Fe2O3 (semiconductor)
Number of sites: 4*10exp(22) Fe sites/cm3
Elastic constants: Voigt 1928
High pressure: spin phase change
Akimoto, Adv. Earth Planet Sci. 12, 81 (1982)
Phonons from IR: Phys. Rev. B16, 1717 (1977)
Dielectric constants:
|
// |
^ |
e o |
20.6 |
24.1 (Ref.1) |
e (¥ ) |
6.7 |
7.0 |
e o in range: 12.8 to 15.2; e (¥ ) = 2.9*2.9 = 8.4 (Samsonov, 1976)
e o =10 for thin film (ref 2)
Band Structure: for thin films, band gap=1.8 eV (ref 3)
References:
1. Phys. Rev. B16, 1717 (1977)
2. A J Davenport, L J Oblonsky, M P Ryan and M F Toney, J. Electrochem. Soc. 147, 2162 (2000)
3. I Díez-Pérez, P Gorostiza and F Sanz, J. Electrochem. Soc. 150, B348 (2003)
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Updated 17 June 2003, A H Harker, University College London, UK