All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates
Journal of Physics D: Applied Physics | Yang J, Liu Z, Jurczak P, Tang M, Li K et al. | A high-performance III-V quantum-dot (QD) laser monolithically grown on Si is one of the most promising candi...
24 September 2020
All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates
Publication Type: | Journal article |
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Publication Sub Type: | Article |
Authors: | Yang J, Liu Z, Jurczak P, Tang M, Li K, Pan S, Sanchez AM, Beanland R, Zhang J, Wang H, Liu F-Q, Li Z, Shutts S, Smowton PM, Chen S, Seeds A, Liu H |
Publisher: | IOP Publishing |
Publication date: | 24/09/2020 |
Journal: | Journal of Physics D: Applied Physics |
Print ISSN: | 0022-3727 |
DOI: | http://dx.doi.org/10.1088/1361-6463/abbb49 |
Full Text URL: | https://discovery.ucl.ac.uk/id/eprint/10112145/ |
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